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| SK60GB125 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK60GB125 Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 13-02-2007 DIL (c) by SEMIKRON SK60GB125 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK60GB125 Preliminary Data This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Features Typical Applications GB 2 13-02-2007 DIL (c) by SEMIKRON SK60GB125 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 13-02-2007 DIL (c) by SEMIKRON SK60GB125 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL (c) by SEMIKRON SK60GB125 UL recognized file no. E 63 532 5 13-02-2007 DIL (c) by SEMIKRON |
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